Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO: Application to Displays

This book highlights the display applications of c–axis aligned crystalline indium gallium zinc oxide (CAAC–IGZO), a new class of oxide material that challenges the dominance of silicon in the field of thin film semiconductor devices. It is an enabler for displays with high resolution and low power consumption, as well as high–productivity manufacturing. The applications of CAAC–IGZO focus on liquid crystal displays (LCDs) with extremely low power consumption for mobile applications, and high–resolution and flexible organic light–emitting diode (OLED) displays, and present a large number of prototypes developed at the Semiconductor Energy Laboratory. In particular, the description of LCDs includes how CAAC–IGZO enables LCDs with extremely low refresh rate that provides ultra–low power consumption in a wide range of use cases. Moreover, this book also offers the latest data of IGZO. The IGZO has recently achieved a mobility of 65.5 cm2 }V–s, and it is expected to potentially exceed 100 cm2 }V–s as high as that of LTPS. A further two books in the series will describe the fundamentals of CAAC–IGZO, and the application to LSI devices. Key features: Introduces different oxide semiconductor field–effect transistor designs and their impact on the reliability and performance of LCDs and OLED displays, both in pixel and panel–integrated driving circuits. Reviews fundamentals and presents device architectures for high–performance and flexible OLED displays, their circuit designs, and oxide semiconductors as an enabling technology. Explains how oxide semiconductor thin–film transistors drastically can improve resolution and lower power consumption of LCDs. INDICE: About the Editors .Notes on contributors .Series editor?s foreword .Preface .Acknowledgements .1 Introduction .1.1 History of Displays .1.2 Requirement for Displays .1.3 Transistor Technology for Displays .1.3.1 Comparison of Silicon and Oxide Semiconductors .1.3.2 FETs in LCDs .1.3.3 FETs in OLED Displays .1.3.4 Recent CAAC–IGZO FET Technologies .1.3.5 Development of OLED Displays Using CAAC–IGZO .2 Applications of CAAC–IGZO FETs to Displays .2.1 Introduction .2.2 Bottom–gate Top–contact FET .2.2.1 Manufacturing Process for CAAC–IGZO FETs with Channel–etch Type of BGTC Structure .2.2.2 GI Formation .2.2.3 Formation of Buried Channel by Stacked Active Layer IGZO .2.2.4 Baking Treatment of CAAC–IGZO .2.2.5 Damaged Layer (n–type) Formed by Deposition of S/D Electrodes .2.2.6 Cleaning of the Back Channel .2.2.7 Copper Wiring for S/D Electrodes .2.3 Top–gate Self–aligned FET .2.3.1 Fabrication Process of TGSA CAAC–IGZO FETs .2.3.2 Formation of GE/GI Patterns .2.3.3 Formation of S/D Regions .2.3.4 GI Thinning and L Reduction .2.4 Characteristics of CAAC–IGZO FET .2.4.1 Current Drivability .2.4.2 Low Off–state Current .2.4.3 Normally–off Id–Vd Characteristics and Small Threshold–voltage Variation .2.4.4 Saturability of Id–Vd Characteristics .2.4.5 Summary .2.5 Density of States and Device Reliability .2.5.1 Introduction .2.5.2 Measurement of Defect States in IGZO Film .2.5.3 Correlation between Oxygen Vacancies and FET Characteristics .2.5.4 Defect States in Silicon Oxide Film .2.5.5 NBIS Mechanism .2.5.6 Summary .2.6 Oxide Conductor Electrode Process .2.6.1 Introduction .2.6.2 Method of Fabricating Oxide Conductor Electrode and Measurements of Its Resistivity .2.6.3 Liquid Crystal Display Device with Oxide Conductor Electrode .2.6.4 Summary .3 Driver Circuit .3.1 Introduction .3.2. Gate–driver Circuit .3.2.1 Logic Circuit and Bootstrapping .3.2.2 Flip–flops .3.2.3 Reduction in Area of Gate–driver Circuit .3.3 Source–driver Circuit .3.3.1 Introduction .3.3.2 Demultiplexer .3.3.3 8–bit Source–driver IC for 13.3–inch 60–Hz 8–bit 8K OLED Panels .3.3.4 12–bit Source–driver IC for 13.3–inch 120–Hz 12–bit 8K OLED Panels .3.3.5 Full–driver IC .4 Application to OLED Displays .4.1 Introduction .4.2 Device Architecture for High Performance OLED .4.2.1 Fundamentals of OLED .4.2.2 Organic Material/Metal Oxide Composite (OMOx) .4.2.3 Exciplex triplet Energy Transfer (ExTET) for High–performance Phosphorescent OLED .4.2.4 Enhancement in Emission Efficiency of Fluorescent OLEDs .4.2.5 Increase in Outcoupling Efficiency of OLED by Molecular Orientation .4.3 OLED Structure for Higher Pixel Density .4.3.1 Tandem OLED .4.3.2 White–tandem OLED, Top Emission, and Color Filter (WTC) Structure .4.3.3 Measures for Crosstalk .4.4 Circuit Design for OLED Displays .4.4.1 Driving OLED Displays .4.4.2 External Compensation .4.4.3 Internal Compensation .4.4.4 Arrangement of Pixel Circuit and High Resolution .4.5 Characteristics of OLED displays .4.5.1 Applications of White–tandem OLED, Top Emission, and Color Filter (WTC) Structure to Displays .4.5.2 Performance of OLED and Liquid Crystal Displays .5 Flexible Displays .5.1 Introduction .5.1.1 OLED and Flexible Displays .5.2 Flexible Display Fabrication Technology .5.2.1 Separation Layer .5.2.2 Separation Process .5.2.3 Transfer Process of Flexible Displays .5.2.4 Moisture Blocking Property of the Flexible OLED Display .5.2.5 Bending Test .5.2.6 System Automation by Transfer Technology Apparatus (TT Apparatus) .5.3 Prototypes of Flexible OLED Displays .6 Application to Liquid Crystal Displays .6.1 Introduction .6.2 Technology for Higher Resolution .6.2.1 Introduction .6.2.2 The Pixel Circuit .6.2.3 Pixel Layout and Aperture Ratio of an LCD .6.2.4 Applicability of Large–sized Displays .6.3 Driving Method for Power Saving .6.3.1 Introduction .6.3.2 Saving Power with Low–frequency Driving .6.3.3 Low–frequency Driving with CAAC–IGZO .6.3.4 Configuration of a Liquid Crystal Cell for Low–frequency Driving .6.3.5 Conclusions .6.4 Characteristics of Liquid Crystal Displays .6.4.1 Introduction .6.4.2 High–Resolution Fringe–field Switching Liquid Crystal Displays .6.4.3 A 434–PPI Reflective Liquid Crystal Display .Appendix Unit Prefix .FET Symbol

• ISBN: 978-1-119-24745-6
• Editorial: Wiley–Blackwell
• Encuadernacion: Cartoné
• Páginas: 440
• Fecha Publicación: 06/01/2017
• Nº Volúmenes: 1
• Idioma: Inglés