Wide Band Gap Semiconductor Nanowires for Optical Devices: Low–Dimensionality Related Effects and Growth

GaN and ZnO nanowires can by grown using a wide variety of methods from physical vapor deposition to wet chemistry for optical devices. This book starts by presenting the similarities and differences between GaN and ZnO materials, as well as the assets and current limitations of nanowires for their use in optical devices, including feasibility and perspectives. It then focuses on the nucleation and growth mechanisms of ZnO and GaN nanowires, grown by various chemical and physical methods. Finally, it describes the formation of nanowire heterostructures applied to optical devices. INDICE: Section 1: GaN and ZnO nanowires for optical devices: assets and limitations 1.1. GaN and ZnO materials: similarities–differences 1.2. Single nanowires: low dimensionality related effects 1.2.1. Quantum confinement 1.2.2. Stress relaxation 1.2.3. Optical and surface effects 1.2.4. Doping and transport (electrical) 1.3. Nanowire ensemble for optical devices 1.3.1. Single vs ensemble (inhomogeneities) 1.3.2. Optical extraction and absorption 1.3.3. Integration processes and first demonstrators 1.3.3.1. GaN nanowire–based devices 1.3.3.2. ZnO nanowire–based devices Section 2: Nucleation and growth mechanisms of GaN and ZnO nanowires  2.1. Molecular beam epitaxy for GaN nanowires 2.1.1. Catalyst–assisted / Self–catalyzed 2.1.2. Self–induced 2.1.3. Selective area growth 2.2. Metal organic vapour phase epitaxy for GaN nanowires 2.2.1. Catalyst–assisted / Self–catalyzed 2.2.2. Self–induced 2.2.3. Selective area growth 2.3. Metal organic vapour phase epitaxy for ZnO nanowires 2.3.1. Catalyst–assisted / Self–catalyzed 2.3.2. Self–induced 2.3.3. Selective area growth 2.4. Physical vapour deposition and wet chemistry for ZnO nanowires 2.4.1. Physical vapor deposition 2.4.2. Wet chemistry Section 3: Heterostructures made from GaN and ZnO nanowires  3.1. InGaN and AlGaN nanowire heterostructures: QWs and alloys 3.1.1. AlGaN nanowire heterostructures 3.1.2. InGaN nanowire heterostructures 3.2. ZnMgO and ZnCdO, type II nanowire heterostructures 3.2.1. ZnMgO and ZnCdO nanowire heterostructures  3.2.2. Type II heterostructures 3.3. Heterojunction: ZnO/GaN and others

• ISBN: 978-1-84821-597-9
• Editorial: ISTE Ltd.
• Encuadernacion: Cartoné
• Páginas: 352
• Fecha Publicación: 17/04/2014
• Nº Volúmenes: 1
• Idioma: Inglés