Wide Band Gap Semiconductor Nanowires for Optical Devices

INDICE: 1. Heterostructures made from GaN and ZnO nanowires 1.1. AlGaN NW heterostructures – J. Teubert, J. Arbiol, M. Eickhoff, Giessen University, Giessen, Germany / ICREA & Institut de CieÌncia de Materials de Barcelona, Barcelona, Spain. 1.2. InGaN NW heterostructures – B. Daudin, CEA–INAC, Grenoble, France. 1.3. ZnMgO / ZnCdO NW heterostructures – G. Feuillet, CEA–LETI, Grenoble, France. 1.4. ZnO NW type II heterostructures – Y. Zhang, University of North Carolina, Charlotte, USA. 2. Optoelectronic devices made from GaN and ZnO nanowires 2.1. Axial GaN NW–based light emitting diodes – Q. Wang, H. N’Guyen, S. Zhao, Z. Mi, McGill University, Montreìal, Canada. 2.2. Radial GaN NW–based light emitting diodes – S. Li, Peking University, Peking, China. 2.3. GaN NW–based lasers – S. Gradec?ak, MIT, Cambridge, USA. 2.4. GaN NW–based ultra–violet photodetectors – L. Rigutti, M. Tchernycheva, Normandie University, Rouen, France / IEF, Paris, France. 2.5. ZnO NW–based LEDs – M. Willander, O. Nur, Linko?ping University, Linko?ping, Sweden. 2.6. ZnO NW–based solar cells – J. Baxter, Drexel University, Philadelphia, USA.

• ISBN: 978-1-84821-687-7
• Editorial: ISTE Ltd.
• Encuadernacion: Cartoné
• Páginas: 368
• Fecha Publicación: 04/08/2014
• Nº Volúmenes: 1
• Idioma: Inglés